May 10, 2021 · This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN ...
This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron ...
This article makes comparisons on the UIS behaviors of three types of commercial E-mode GaN switching devices, including the withstanding physics, the ...
The experimental measurements show that the GaN cascode devices have lower avalanche energy rating when compared with the closely rated SiC cascode devices just ...
Missing: Behaviors | Show results with:Behaviors
Investigations on Unclamped-Inductive-Switching Behaviors of p ...
colab.ws › ispsd49238.2022.9813660
The measurement results showed that C-doped HEMTs grown on Si substrates exhibited high-saturation current, stabilized threshold voltage, and minor C.C. at ...
We present the first multi-Watt demonstration of a diode pumped cryogenically cooled Nd:YAG operating on the 946nm, 4F3/2 to 4I9/2 transition. Preliminary ...
In general the switching behaviour of a power device during the unclamped inductive switching (UIS) test will determine the reliability of the power device as ...
Missing: Behaviors | Show results with:Behaviors
Li, Comparison investigations on unclamped-inductive-switching Behaviour's of GaN switching devices, IEEE Trans. Ind. Electron., № 69, с. 5041 https://doi ...
Missing: Behaviors | Show results with:Behaviors
The unclamped inductive switching stresses are applied to p-gate GaN. HEMTs ... Both experiments demonstrate the robustness of SiC and GaN devices under ...
The avalanche capability of power devices is usually tested in an unclamped inductive switching (UIS) circuit [1]-[11]. Fig. 2(a) shows the UIS circuit used in ...
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