scholar.google.com › citations
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer ... induced positive trapped charges in buried oxide is more ...
Request PDF | Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer | By skillfully applying the voltage bias, ...
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. 2019, IEICE Electronics Express. Influence of characteristics ...
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer ... charge are oxide-trapped charge and interface-trap charge ...
However, the radiation-induced charge buildup in the BOX layer ... Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer ... Demonstration of 2.58 THz detectors based on asymmetric channel ...
source of radiation induced variation is regional and due to trapped charge in the buried oxide – not the gate oxide. 60. Page 63. 2) Specific Objectives.
... charge trapping in buried oxide for partially-depleted SOI NMOSFET, IEICE ELECTRONICS EXPRESS, 2020, 第 4 作者（8） A comprehensive evaluation of radiation ...
Mar 24, 2021 · oxide (BOX) damage induced by total-ionizing-dose (TID) effect considering positive oxide trapped charge (Not) gen- erated in silicon on ...
The radiation enhanced DIBL effect due to the parasitic bipolar ef- fect and the oxide trapped charge in the buried oxide is first proposed. Through ...
Missing: layer. | Show results with:layer.