An experimental characterization of new-generation normally-off vertical channel 1200 V SiC JFETs under unclamped repetitive stress (URS) is presented.
An experimental characterization of new-generation normally-off vertical channel 1200 V SiC JFETs under unclamped repetitive stress (URS) is presented.
In fact, thanks to their very high critical electric field capability, SiC power devices can withstand much higher voltage stress with much lower on-resistance ...
Unclamped repetitive stress on 1200V normally-off SiC JFETs
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Unclamped repetitive stress on 1200V normally-off Si C JFETs. Abbate, C.; Busatto, G.; Iannuzzo, F. Microelectronics Reliability 52(9-10): 2420-2425.
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This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation.
Abstract — To investigate the unclamped inductive switch. (UIS) characteristics, 1200 V silicon carbide (SiC) planar. MOSFETs with four cell topologies of ...
The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes ...
Unclamped repetitive stress on 1200V normally-off SiC JFETs · Degradation of Power SiC MOSFET under Repetitive UIS and Short Circuit Stress · Juraj Marek. 2021 ...
Sep 25, 2022 · SiC cascode devices can also withstand higher bus voltage in comparison to GaN cascode devices when under electrothermal stress by unclamped ...