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- research-articleJune 2010
Intel LVS logic as a combinational logic paradigm in CNT technology
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 77–81In this paper, we systematically evaluate combinational logic families for CNT technology implementation for a variety of logic families, signal transition times, and transistor parameters. We compare CMOS static logic, transmission gate logic, and ...
- research-articleJune 2010
Design methodology for Carbon Nanotube based circuits in the presence of metallic tubes
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 71–76Carbon Nanotube Field Effect Transistor (CNFET) has a potential to become successor of Si-CMOS devices because of its excellent electronic properties. One of the most important challenges for the CNT-based technology is the undesired presence of ...
- research-articleJune 2010
Regular fabric design with ambipolar CNTFETs for FPGA and structured ASIC applications
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 65–70In this paper, we propose for the first time the application of ambipolar CNTFETs with in-field controllable polarities to design regular fabrics with static logic. We exploit the high expressive power provided by complementary static logic built with ...
- research-articleJune 2010
Stochastic nanoscale addressing for logic
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 59–64In this paper we explore the area overhead associated with the stochastic assembly of nanoscale logic. In nanoscale architectures, stochastically assembled nanowire decoders have been proposed as a way of addressing many individual nanowires using as ...
- research-articleJune 2010
- research-articleJune 2010
- research-articleJune 2010
NanoV: nanowire-based VLSI design
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 53–58In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nan-otechnologies, nanowires have the edge in the size of circuits and logic arrays that have already been fabricated and experimentally evaluated. ...
- research-articleJune 2010
Reducing transistor count in clocked standard cells with ambipolar double-gate FETs
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 47–52This paper presents a set of circuit design approaches to achieve clocked standard logic cell functions with ambipolar double-gate devices such as the Double Gate Carbon Nanotube FET (DG-CNTFET). The cells presented in this work use the infield ...
- research-articleJune 2010
Fault modeling for FinFET circuits
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 41–46FinFETs are expected to supplant planar CMOS field-effect transistors (FETs) in the near future, owing to their superior electrical characteristics. From a circuit testing viewpoint, it is unclear if CMOS fault models are comprehensive enough to model ...
- research-articleJune 2010
UNION: a unified inter/intra-chip optical network for chip multiprocessors
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 35–40As modern computing systems become increasingly complex, communication efficiency among and inside chips has become as important as the computation speeds of individual processor cores. Traditionally, inter-chip and intra-chip communication ...
- research-articleJune 2010
Design and comparison of NML systolic architectures
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 29–34Nanomagnet Logic (NML) is a device architecture that utilizes the magnetization of nano-scale magnets to perform logical operations. NML has been experimentally demonstrated and operates at room temperature. Because the nanomagnets are non-volatile, as ...
- research-articleJune 2010
Fast equivalence-checking for quantum circuits
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 23–28We perform formal verification of quantum circuits by integrating several techniques specialized to particular classes of circuits. Our verification methodology is based on the new notion of a reversible miter that allows one to leverage existing ...
- research-articleJune 2010
High throughput and low power dissipation in QCA pipelines using Bennett clocking
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 17–22This paper presents a detailed analysis of an architectural pipeline scheme for Quantum-dot Cellular Automata (QCA); this scheme utilizes the so-called Bennett clocking for attaining high throughput and low power dissipation. In this arrangement, ...
- research-articleJune 2010
Towards logic functions as the device
- Prasad Shabadi,
- Alexander Khitun,
- Pritish Narayanan,
- Mingqiang Bao,
- Israel Koren,
- Kang L. Wang,
- C. Andras Moritz
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 11–16This paper argues for alternate state variables and new types of sophisticated devices that implement more functionality in one computational step than typical devices based on simple switches. Elementary excitations in solids enabling wave interactions ...
- research-articleJune 2010
Memristor based programmable threshold logic array
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 5–10In this work, we utilized memristors in the realization of power and area efficient programmable threshold gates. Memristors are used as weights at the inputs of the threshold gates. The threshold gates are programmed by changing the memristance to ...
- research-articleJune 2010
- research-articleJune 2010
Compact method for modeling and simulation of memristor devices: ion conductor chalcogenide-based memristor devices
- Robinson E. Pino,
- James W. Bohl,
- Nathan McDonald,
- Bryant Wysocki,
- Peter Rozwood,
- Kristy A. Campbell,
- Antonio Oblea,
- Achyut Timilsina
NANOARCH '10: Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale ArchitecturesPages 1–4A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order ...