Abstract: We report a fast-programming, compact sense and latch (SL) circuit to realize an eight-level NAND flash memory. Fast programming is achieved by ...
We report here the fabrication of a 144-Mb eight-level NAND flash memory with a 0.67-MB/s program throughput. The distribution and chip organization are ...
We report a fast-programming, compact sense and latch (SL) circuit to realize an eight-level NAND flash memory. Fast programming is achieved by supplying ...
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A 120 mm/sup 2/ 64 Mb NAND flash memory achieving 180 ns/byte effective program speed · A 144 Mb 8-level NAND flash memory with optimized pulse width programming.
Nobukata et al., “A 144-Mb, Eight-Level NAND Flash Memory with Optimized Pulsewidth Programming,” IEEE Journal of Solid-State Circuits, Vol. 35, No. 5, pp ...
Hiromi Nobukata's 3 research works with 29 citations, including: A 144-Mb, eight-level NAND flash memory with optimized pulsewidth programming.
A 144-Mb, eight-level NAND flash memory with optimized pulsewidth programming · Computer Science, Engineering. IEEE Journal of Solid-State Circuits · 2000.
A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme ... A 144-Mb, eight-level NAND flash memory with optimized pulsewidth programming.
Nobukata et al., “A 144-Mb, Eight-Level NAND Flash Memory with Optimized Pulsewidth. Programming,” IEEE Journal of Solid-State Circuits, Vol. 35, No. 5, pp ...
TL;DR: A fast-programming, compact sense and latch (SL) circuit to realize an eight-level NAND flash memory that is 1.7 times faster than conventional program ...