An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully and the program throughput reaches 6 MB/s at 4-KB page ...
A 146 mm<sup>2</sup> 8 Gb NANO flash memory with 4-level programmed cells is fabricated in a 70 nm CMOS technology. A single-sided pad architecture and ...
Hara et al, “A 146mm/sup 2/8 Gb NAND Flash Memory with 70 nm CMOS Technology”, ISSCC 2005 Digest of Technical Papers, pp. 44–45. Google Scholar. G. J. Hemink ...
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A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology Takumi Abe, Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi ...
Missing: multi- level
Characterizing, Exploiting, and Mitigating Vulnerabilities in MLC NAND Flash Memory Programming · A 146 mm2 8 Gb NAND flash memory with 70 nm CMOS technology.
33, Issue 8, pp. 1228-1238, Aug. 1998. Hara, T. et al, A 146MM2 8GB NAND Flash Memory With 70NM CMOS Technology, ISSCC Session 2 Non-Volatile Memory 2.1 ...
A 146mm2 8Gb NAND Flash Memory in 70nm CMOS. 1:30 ... An 8Gb Multi-Level NAND Flash Memory in a 63nm CMOS Process ... memory is fabricated in a 63nm CMOS technology ...
Abstract—This paper investigates the potential of using strong BCH codes to improve multilevel data-storage NAND Flash memory capacity.
TL;DR: A 146 mm/sup 2/ 8 Gb NANO flash memory with 4-level programmed cells is fabricated in a 70 nm CMOS technology and the programming throughput is ...
A method for minimizing program disturb in Flash memories. To reduce program disturb in a NAND Flash memory cell string where no programming from the erased ...