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A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. Abstract: Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator ( ...
A study of diffusive transport in 14nm FDSOI. MOSFET: NEGF versus QDD. G. Mugny1,2,6, F.G. Pereira1,2,4, D. Rideau1, F. Triozon2, Y.M. Niquet3, M. Pala4, D ...
The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum ...
Mugny and others published A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD | Find, read and cite all the research you need on ResearchGate.
The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum ...
Garetto, Christophe Delerue: A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC 2016: 424-427; 2012. [c1]. view. electronic edition ...
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC 2016: 424-427. [+][–]. Coauthor network. maximize. Note that this feature is a ...
D. Garetto's 23 research works with 1090 citations, including: A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD.
... and theoretical investigation of the 'apparent'mobility degradation in Bulk and ... A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. G Mugny ...
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. 2016 46th European Solid-State Device Research Conference. 2016 | Book chapter. WOSUID�...