The results show that the sensing delay degradation is slightly higher in RD model than Atomistic trap-based model for different workloads. Nevertheless, we ...

This paper presents comparative impact analysis of RD and. Atomistic trap-based BTI models for the SRAM Sense Amplifier. ... temperature variation on SRAM sense ...

Comparative Analysis of RD and Atomistic. Trap-Based BTI models on SRAM Sense Amplifier. Innocent Agbo Mottaqiallah Taouil Said Hamdioui. Delft University of ...

Request PDF | On Apr 1, 2015, Innocent Agbo and others published Comparative analysis of RD and Atomistic trap-based BTI models on SRAM Sense Amplifier ...

Comparative analysis of RD and Atomistic trap-based BTI models on SRAM Sense Amplifier. Conference paper (2015). Authors. I.O. Agbo Computer Engineering ...

This paper presents comparative impact analysis of RD and Atomistic trap-based BTI models for the SRAM Sense Amplifier. The evaluation metric, the sensing delay ...

Comparative analysis of rd and atomistic trap-based bti models on sram sense amplifier. I Agbo, M Taouil, S Hamdioui, S Cosemans, P Weckx, P Raghavan ...

This paper presents the impact of BTI for two different SRAM sense amplifiers which target two applications, i.e., low power (LP), and high performance (HP).

... (R-D) model and the Atomistic trap-based model. This paper presents a thorough comparative analysis of the two models at the gate-level in order to explore ...

This paper presents the impact of BTI for two different SRAM sense amplifiers which target two applications, ie, low power (LP), and high performance (HP).