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Jul 21, 2011 · This demonstrates that SiGe VLSI circuits benefit from aggressive voltage scaling significantly more than Si circuits, thereby making SiGe ...
PMOSFETS UNDER AGGRESSIVE VOLTAGE SCALING. In this section, we evaluate the ... clearly show that SiGe circuits benefit from aggressive voltage scaling ...
This study aims to understand the potential of buried Silicon-Germanium (SiGe) technology from the perspective of VLSI logic circuits exploiting aggressive ...
; Groeseneken, Guido (2012). Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling . Crupi, Felice; Alioto ...
Witters, T. Y. Hoffmann, “Experimental Analysis of Buried SiGe pMOSFETs from the Perspective of Aggressive Voltage Scaling,” in print on Proc. of ISCAS 2011 ...
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. Proceedings - IEEE International Symposium on Circuits and ...
Leakage power reduction of SiGe pMOSFETs with respect to Si.. Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.
Buried silicon-Germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling. In this paper, the potential of Silicon ...
Recommendations. Buried silicon-Germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling. In this paper, the ...
Spectacular improvement in device performance can be achieved by aggressive scaling of device sizes in the nanometer regime. The quest for high performance ...