Abstract: This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors.
Abstract—This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect. Transistors.
This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been ...
... junctionless Vertical Slit Field Effect Transistors. N-type devices have been successfully manufactured on SOI substrates with a doping density 5×1018 atoms/cm3 ...
Heavily doped junctionless vertical slit FETs with slit width Below 20 nm. L Barbut, F Jazaeri, D Bouvet, JM Sallese. Proceedings of the 20th International ...
This paper investigates the n-type vertical slit FET (VeSFET) performance at 7-nm node and beyond by TCAD simulation. VeSFET is a twin-gate device with 3-D ...
Vertical Slit Field Effect Transistors as new devices for nano scale ...
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Title of contribution: Heavily doped junctionless vertical slit FETs with slit width Below 20 nm. 19.06.2013. , Gdynia-Poland, Poland. Awards. Outstanding Paper ...
Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm. Conference Paper. Jan 2013. Lucian Barbut · Farzan Jazaeri ...
This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been ...
Sallese, “Heavily Doped Junctionless Vertical Slit. FETs with Slit Width Below 20nm,” International Conference Mixed Design of. Integrated Circuits and ...