This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO 2 ) ferroelectric field-effect transistors (FeFET) ...

Cite as: Sourav De . Interfacial Layer Engineering to Enhance Endurance and Noise Immunity of FeFETs for IMC Applications. TechRxiv. June 02, 2022.

FeFET devices with SiON interfacial layers demonstrated excellent noise immunity, improved endurance and lower switching voltages, while showing no retention ...

This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) ...

This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) ...

Dive into the research topics of 'Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications'. Together they form a unique ...

This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a ...

Oct 27, 2022 · Although the FeFET devices with the SiO2 interface demonstrated excellent noise immunity, FeFET with the SiON interface showed a one order ...

Oct 27, 2022 · Although the FeFET devices with the SiO2 interface demonstrated excellent noise immunity, FeFET with the SiON interface showed a one order ...

Synergistic approach of interfacial layer engineering and read-voltage optimization in HfO 2 -based FeFETs for in-memory-computing applications.