I am owning broad educational background in physics, which is based on the traditions of well known russian school of physicists.
Publication Topics. I-V Curves,Phase Shift,Voltage Waveforms,Device Width,Drain Current,Electrostatic Discharge,Protection Devices,Pulse Width,Si Substrate ...
Sergey Bychikhin currently works at NXP Semiconductors. He is involved topics related to electro-static device protection and characterization.
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3Results for "Сергей Бычихин". Sergey Bychikhin. Everything is possible. Germany. Vienna University of Technology. Moscow State University M.V.Lomonosov, ...
Jul 3, 2024 · Simple spice model for transient behavior of TVS under TLP pulse stress. Explanations and detailed descriptions are provided in presentation ...
Self-heating phenomena in high-power III-N transistors and ...
www.cambridge.org › journals › article
Sergey Bychikhin received his M.Sc. (1995) and Ph.D. (2000) degrees from Physics Department of the M.V. Lomonosov Moscow State University, Russia. Since ...
A 25 V ESD NPN transistor is made high current capable by means of distributed emitter ballasting. The proposed segmentation of the emitter contact area ...
Notice ; Title: Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping Method ; Authors: Bychikhin, Sergey · Dubec, Victor · Kuzmik, Jan
Sergey Bychikhin (Alten Gmbh – Munich, Germany), Dr. Hans-Dieter Wohlmuth (Infineon Technologies AG – Neubiberg, Germany), Dr. Werner Simbürger (High Power ...