In this paper, we present an analysis of resistive-open defects in the write driver of SRAMs designed with the Infineon 65nm technology.

In this paper, we present an analysis of resistive-open defects in the write driver of SRAMs designed with the Infineon 65nm technology.

This paper presents an analysis of resistive-open defects in the write driver of SRAMs designed with the Infineon 65nm technology, and shows that in some ...

In this paper, we present an analysis of resistive-open defects in the write driver of SRAMs designed with the Infineon 65nm technology.

Un-Restored Destructive Write Faults Due to Resistive-Open Defects in the Write Driver of SRAMs ... un-restored write electrical level fault models for SRAMs.

The effects induced by resistive-open defects in the write driver prevent the write control part to correctly decide between write 0 and write 1 operation.

The malfunction of the pre-charge circuit leads to two types of dynamic faults named Un-Restored Write Faults (URWFs) and Un-Restored Read Faults (URRFs). These ...

Un-Restored Destructive Write Faults Due to Resistive-Open Defects in the Write Driver of SRAMs pp. 361-368. Using Domain Partitioning in Wrapper Design for ...

In this paper, we present an analysis of resistive-open defects in the write driver of SRAMs designed with the Infineon 65nm technology.

Bastian, “Un-Restored Destructive Write Faults due to Resistive-Open Defects in the Write Driver of SRAMs”,. Proc. of VLSI Test Symposium, pp. 361-366, 2007 ...