default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDDRC 2019: Ann Arbor, MI, USA
- Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. IEEE 2019, ISBN 978-1-7281-2111-6
- Nick Fichtenbaum:
GaN Integrated Circuits for Power Electronics. 1-26 - Supriyo Datta:
p-Bits for Probabilistic Computing. 35-36 - Han Wui Then
, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer:
High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). 39-40 - Yongjie Cui, Yu Cao, Manyam Pilla, Edward Beam, Andy Xie, Cathy Lee, Andrew Ketterson, Michael Roach, Anton Geiler, Michael Geiler, Lee Burns, Douglas Linkhart:
Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application. 41-42 - Sang H. Yoo, Enrique D. Gomez, Thomas N. Jackson:
High Mobility and Drive Current ZnO Thin Film Transistors. 43-44 - Andrew D. Carter, Miguel E. Urteaga, Petra Rowell, Joshua Bergman, Andrea Arias:
Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact. 45-46 - Girish Rughoobur, Lay Jain, Akintunde Ibitayo Akinwande:
Towards Vacuum-Less Operation of Nanoscale Vacuum Channel Transistors. 47-48 - Pratyush Pandey, Cristobal Alessandri, Alan C. Seabaugh:
Process Dependent Switching Dynamics of Ferroelectric Hafnium Zirconate. 49-50 - Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann, Thomas Mikolajick, Johann W. Bartha:
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. 51-52 - Paolo Paletti, Mina Asghari Heidarlou, Karla González-Serrano, Cristobal Alessandri, Alan C. Seabaugh:
Steep Subthreshold Swing Originating from Gate Delay. 53-54 - Sushant Mittal, Ashish Pal, Mehdi Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, El Mehdi Bazizi, Blessy Alexander, A. B. Sachid, Buvna Ayyagari:
Highly-Doped Through-Contact Silicon Epi Design at 3 nm node. 55-56 - Asif Islam Khan:
Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance? 57-58 - Wei D. Lu:
2D materials in resistive memory and neuromorphic computing system applications. 59-60 - Shiheng Lu, Jorge A. Cardenas, Robyn Worsley, Nicholas X. Williams, Joseph B. Andrews, Cinzia Casiraghi, Aaron D. Franklin:
Printing h-BN Gate Dielectric for Flexible, Low-hysteresis Carbon Nanotube Thin-Film Transistors at Low Temperature. 61-62 - Yoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm:
Gigahertz Zinc-Oxide TFT-Based Oscillators. 63-64 - Connor McClellan, Andrew C. Yu, Ching-Hua Wang, H.-S. Philip Wong, Eric Pop:
Vertical Sidewall MoS2 Growth and Transistors. 65-66 - Hefei Liu, Xiaodong Yan, Huan Zhao, Han Wang:
Emerging Low Dimensional Material Devices for Beyond von-Neumann Computing. 67-68 - Kei May Lau:
III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration. 69-70 - Hongwei Zhao, Sergio Pinna, Fengqiao Sang, Simone Tommaso Suran Brunelli, Larry A. Coldren, Jonathan Klamkin:
High Power Indium Phosphide Photonic Integrated Circuit Platform. 71-72 - Debarghya Sarkar, Sizhe Weng, Yunpeng Xu, Frank Greer, Rehan Kapadia:
Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide. 73-74 - Marcin Siekacz, Grzegorz Muziol, Henryk Turski, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Mikolaj Zak, Anna Feduniewicz-Zmuda, Pawel Wolny, M. Mikosza, Marta Sawicka, Czeslaw Skierbiszewski:
Tunnel junctions for vertically integrated multiple nitrides laser diodes. 75-76 - Daniel Feezell, Arman Rashidi, Morteza Monavarian, Andrew Aragon, Mohsen Nami, Saadat Mishkat-Ul-Masabih, Ashwin Rishinaramangalam:
III-Nitride High-Speed Optoelectronics. 77-78 - Adithi Krishnaprasad, Sonali Das, Nitin Choudhary, Durjoy Dev, Hee-Suk Chung, Olaleye Aina, Yeonwoong Jung, Tania Roy:
Linear Weight Update in MoS2/Graphene Memristive Synapses for Unsupervised Learning. 79-80 - Parijat Sengupta, Shaloo Rakheja:
Spin-valley coupled caloritronics with strained honeycomb lattices. 81-82 - Shruti Subramania, Ke Xu, Simon K. Moser, Donna Deng, Jun Li, Randall M. Feenstra, Susan K. Fullerton-Shirey, Joshua A. Robinson:
Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures. 83-84 - Zheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal, Asif Islam Khan:
Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK. 85-86 - Punyashloka Debashis, Pramey Upadhyaya, Zhihong Chen:
Electrical Annealing and Stochastic Resonance in Low Barrier Perpendicular Nanomagnets for Oscillatory Neural Networks. 87-88 - Ying-Chen Chen, Szu-Tung Hu, Chao-Cheng Lin, Jack C. Lee:
Resistive Switching Early Failure and Gap Identification in Bilayer Selectorless RRAM Applications. 89-90 - Karl-Magnus Persson, Mamidala Saketh Ram, Mattias Borg, Lars-Erik Wernersson:
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM. 91-92 - Mengwei Si, Xiao Lyu, Peide D. Ye:
Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. 93-95 - Sheikh Z. Ahmed, Yaohua Tan, Avik W. Ghosh:
Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs. 95-96 - Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation. 97-98 - Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin, Helena Silva, Ali Gokirmak:
Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk. 99-100 - Xiang Li, Mingda Li, Alyosha C. Molnar, Debdeep Jena, Huili Grace Xing:
A Single-Device Embodiment of XNOR Logic: TransiXNOR. 101-102 - Jacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay Kumar Banerjee, Jaydeep P. Kulkarni:
Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices. 103-104 - Jonathan P. Sculley, Yihao Fang, Brian Markman, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder:
First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors. 105-106 - Yuezhang Zou, Darshil K. Gala, James A. Bain:
Impact Ionization Model for S-NDR based Threshold Switching Devices. 107-108 - V. R. Saran Kumar Chaganti, Yao Zhang, Steven J. Koester:
Non-volatile Capacitance Tuning in Graphene/(Hf, Zr)O2/Metal Varactors. 109-110 - José A. Bahamonde, Harish Krishnaswamy, Ioannis Kymissis:
A Tunable Surface Acoustic Wave Device on Zinc Oxide via acoustoelectric interaction with AIGaN/GaN 2DEG. 111-112 - Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken:
Tunnel FETs using Phosphorene/ReS2 heterostructures. 113-114 - Wriddhi Chakraborty, Kai Ni, Sourav Dutta, Benjamin Grisafe, Jeffrey Smith, Suman Datta:
Cryogenic Response of HKMG MOSFETs for Quantum Computing Systems. 115-116 - Sushovan Dhara, Kartikey Thakar, Savantan Ghosh, Abin Varghese, Suddhasatta Mahapatra, Saurabh Lodha:
Comparative Evaluation of vdW Materials Based PN Junction and FET for Gas Sensing. 117-118 - Parastou Fakhimi, Weidong Zhang, Tyler A. Growden, Elliott R. Brown, R. Droopad, K. M. Hansen, Paul R. Berger:
New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. 119-120 - Terry Y. T. Hung, Chin-Sheng Pang, Xiangkai Liu, Dmitry Zemlyanov, Zhihong Chen:
Atomically Thin p-doping Layer and Record High Hole Current on WSe2. 121-122 - Digangana Khan, Durga Gajula, Hongmei Li, Ferhat Bayram, Goutam Koley:
Photoacoustic Detection of Ammonia and Hydrogen Using Plasmonic Absorption in Pt Functionalized GaN Microcantilevers. 123-124 - Asir Intisar Khan, Kevin Brenner, Kirby K. H. Smithe, Michal J. Mleczko, Eric Pop:
Large Temperature Coefficient of Resistance in Atomically Thin 2D Devices. 125-126 - Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van De Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe:
First-principles Study of the Electron and Hole Mobility in Silicane. 127-128 - Omar B. Mohammed, Leonard F. Register, Sanjay Kumar Banerjee:
Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. 129-130 - Isaac Ruiz, Thomas E. Beechem, Gyorgy Vizkelethy, Paul M. Thelen, Joshua Shank, Stephen W. Howell, Michael D. Goldflam:
Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation Detection. 131-132 - Simran Shahi, Maomao Liu, Hemendra Nath Jaiswal, Licheng Xiao, Sichen Wei, Hyun Kim, Seok Joon Yun, Young Hee Lee, Fei Yao, Huamin Li:
Field Effect and Raman Characterization of Self-Assembled Mos2 Nanoscrolls. 133-134 - Ruiping Zhou, Jörg Appenzeller:
About the interplay between contact and channel resistance in MoS2 and its impact on mobility extraction. 135-136 - Jorge A. Cardenas, Shiheng Lu, Nicholas X. Williams, Aaron D. Franklin:
Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTs. 137-138 - Jie Zhang, Guangyang Lin, Peng Cui, Yuping Zeng:
High-performance ultrathin body TiO2 TFTs with record on/off current ratio and subthreshold swinz. 139-140 - Zhiwu Zheng, Levent E. Aygun, Yoni Mehlman, Sigurd Wagner, Naveen Verma, James C. Sturm:
Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown. 141-142 - Jaeyi Chun, Srabanti Chowdhury:
Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width. 143-144 - Tyler A. Growden, David F. Storm, Evan M. Cornuelle, Logan M. Whitaker, Brian P. Downey, Weidong Zhang, Jeffrey W. Daulton, Richard Molnar, Elliott R. Brown, Paul R. Berger, David J. Meyer:
Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. 145-146 - Sang Woo Han, Jianan Song, Rongming Chu:
Characteristics of P-channel GaN MOSFET up to 300 °C. 147-148 - Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra:
Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. 149-150 - Shivam Sharma, Ke Zeng, Abhishek Vaidya, Uttam Singisetti:
Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga2O3. 151-152 - Yury Turkulets, Ilan Shalish:
Surface states in AlGaN/GaN high electron mobility transistors: Energy profiling using channel photocurrent spectroscopy. 153-154 - Yuelin Wu, Cristian Herrera, Aaron Hardy, Matthias Muehle, Tom Zimmermann, Timothy A. Grotjohn:
Diamond Metal-Semiconductor Field Effect Transistor for High Temperature Applications. 155-156 - Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. 157-158 - Wenshen Li, Kazuki Nornoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing:
Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes. 159-160 - Ming Xiao, Ruizhe Zhang, Garrett Schlenvogt, Thomas Jokinen, Han Wang, Yuhao Zhang:
Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching. 161-162 - Sayantan Ghosh, Sushovan Dhara, Abin Varghese, Kartikey Thakar, Saurabh Lodha:
Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction. 163-164 - Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen:
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. 165-166 - Brandon Isaac, Yuan Liu, Sergio Pinna, Larry Coldren, Jonathan Klamkin:
Waveguide Uni-Traveling-Carrier Photodiodes for mmW Signal Generation: Space-Charge Impedance and Efficiency Limitations. 167-168 - Changyeong Jeong, Yongbum Park, L. Jay Guo:
Flexible organic light-emitting diodes with efficiency improvement by dielectric-metal-dielectric anode. 169-170 - Kevin Lee, Shyam Bharadwaj, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena:
Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes. 171-172 - Yong-Bum Park, Changyeong Jeong, L. Jay Guo:
Ultrathin Metal Film Transparent Conductor for Efficient Light Coupling in Organic Light Emitting Diode. 173-174 - Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max Christian Lemme:
High-Responsivity Flexible Photodetectors based on MOVPE-MoS2. 175-176 - Kartikey Thakar, Saurabh Lodha:
Photo-amplification in Bipolar $\mathbf{WSe}_{2}$ Transistors with Electrostatic Gating. 177-178 - Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell:
$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity. 179-180 - Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh:
Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization. 181-182 - Hsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J. W. Rodwell:
InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing. 183-184 - Abdullah Ash-Saki, Mahabubul Alam, Swaroop Ghosh:
True Random Number Generator using Superconducting Qubits. 185-186 - Mohammad Khairul Bashar, Richard Hrdy, Antik Mallick, Farzad Farnoud Hassanzadeh, Nikhil Shukla:
Solving the Maximum Independent Set Problem using Coupled Relaxation Oscillators. 187-188 - Roop K. Mech, Neha Mohta, Rangarajan Muralidharan, Digbijov N. Nath:
Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer $\alpha$ -In2Se3. 189-190 - Hojoon Ryu, Haonan Wu, Fubo Rao, Wenjuan Zhu:
Ferroelectric Tunneling Junctions for Neurosynaptic Computing. 191-192 - Durjoy Dev, Adithi Krishnaprasad, Zhezhi He, Sonali Das, Mashiyat Sumaiya Shawkat, Madison Manley, Olaleye Aina, Deliang Fan, Yeonwoong Jung, Tania Roy:
Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching Memristor. 193-194 - Vivek Saraswat, Sandip Lashkare, Pankaj Kumbhare, Udayan Ganguly:
Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise. 195-196 - Manuel Le Gallo, Abu Sebastian, Evangelos Eleftheriou:
Phase-change memory enables energy-efficient brain-inspired computing. 197-198 - Omor Shoron, Timo Schumann, Manik Goyal, David Kealhofer, Susanne Stemmer:
Demonstration of FETs with 3D Dirac Semimetal, Cd3As2. 201-202 - Stephanie M. Bohaichuk, Mario M. Pelella, Yifei Sun, Zhen Zhang, Shriram Ramanathan, Eric Pop:
A Novel ESD Clamp Based on the VO2 Insulator-Metal Transition. 203-204 - Evan M. Anderson, Leon Maurer, Lisa A. Tracy, S. W. Smith, Ping Lu, Aaron M. Katzenmeyer, Andrew D. Baczewski, DeAnna M. Campbell, Michael T. Marshall, Dan R. Ward, Tzu-Ming Lu, Shashank Misra:
Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric. 205-206 - Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck:
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. 207-208 - Mohammad T. Sharbati, Se Youn Cho, Golnaz Najaf Tomaraei, Qingzhou Wan, Joshua Schlea, Mostafa Bedewy, Feng Xiong:
Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved Reliabilities. 209-210 - Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing:
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2. 209-210 - Sandeep Krishna Thirumala, T. Hung, Arnab Raha, Niharika Thakuria, K. Cho, Vijay Raghunathan, Zhihong Chen, S. Gupta:
WSe2 based Valley-Coupled-Spintronic Devices for Low Power Non-Volatile Memories. 211-212 - Qingzhou Wan, Peng Zhang, Qiming Shao, Mohammad T. Sharbati, John R. Erickson, Kang L. Wang, Feng Xiong:
Dynamic $(\mathrm{Bi}_{\mathrm{x}}\mathrm{Sb}_{1-\mathrm{x}})_{2}\mathrm{Te}_{\mathrm{3}}$ Synaptic Devices with Programmable Spatio-Temporal Responses. 213-214 - Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini:
In-memory solution of linear systems with crosspoint arrays without iterations. 215-216 - Kyle J. Liddy, Nolan S. Hendricks, Andrew J. Green, Andreas Popp, Miles T. Lindquist, Kevin D. Leedy, Stephen E. Tetlak, Neil A. Moser, Günter Wagner, Kelson D. Chabak, Gregg H. Jessen:
Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs. 219-220 - Chunlei Wu, Nikhita Shaju, Hansheng Ye, Benjamin Grisafe, Suman Datta, Patrick Fay:
Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures. 221-222 - Chandan Joishi, Zhanbo Xia, Shahadat Hasan Sohel, Saurabh Lodha, Siddharth Rajan:
Epitaxial passivation of delta doped $\beta$ -Ga2O3 field effect transistors. 223-224 - Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki:
Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs. 225-226 - Zhihui Cheng, Hattan Abuzaid, Yifei Yu, Shreya Singh, Linyou Cao, Aaron D. Franklin:
New Observations in Contact Scaling for 2D FETs. 227-228 - Alwin Daus, Sam Vaziri, Kevin Brenner, Ryan W. Grady, Alvin U. Tang, Eric Pop:
Flexible Top-Gated Monolayer MoS2 Transistors with High Mobility. 229-230 - Ankur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James C. Hone, James T. Teherani:
Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs. 231-232 - Max Christian Lemme:
Efficient Optoelectronics with 2D Materials. 233-234 - Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Jun Suda:
Process Technologies for GaN High Voltage Devices. 235-236 - Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. 237-238 - Zhanbo Xia, Caivu Wang, Hareesh Chandrasekar, Wyatt Moore, Aidan Lee, Nidhin Kurian Kalarickal, Fengyuan Yang, Siddharth Rajan:
Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field. 239-240 - Henryk Turski, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Shyam Bharadwaj, Mikolaj Chlipala, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Huili Grace Xing, Debdeep Jena, Czeslaw Skierbiszewski:
Buried tunnel junction for p-down nitride laser diodes. 241-242 - Jorge Gomez, Sourav Dutta, Kai Ni, Benjamin Grisafe, Jeffrey Smith, Asif Khan, Suman Datta:
Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect Transistor. 247-248 - Junkyo Suh, Andrew C. Meng, Marc Jaikissoon, Michael Braun, Taeho R. Kim, Ann F. Marshall, Anahita Pakzad, Paul C. McIntyre, Krishna C. Saraswat:
3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation. 249-250 - U. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso, M. W. Stoker, Jeffrey B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, Evgeny Kaganer:
High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs. 251-252 - Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken:
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices. 253-254
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
last updated on 2024-10-18 19:16 CEST by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint
dblp was originally created in 1993 at:
since 2018, dblp has been operated and maintained by:
the dblp computer science bibliography is funded and supported by:
